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TP65H070LSG-TR

TP65H070LSG-TR

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制造商部分
TP65H070LSG-TR
制造商
Transphorm
描述
GANFET N-CH 650V 25A PQFN88
类别
分立半导体产品
家庭
晶体管 - 场效应晶体管、场效应晶体管 - 单
系列
-
有存货
498
在线数据表
-
询问

Product Specifications

Type 描述
系列:TP65H070L
包裹:Tape & Reel (TR)Cut Tape (CT)
零件状态:Active
场效应管类型:N-Channel
技术:GaNFET (Gallium Nitride)
漏源电压 (vdss):650 V
电流 - 连续漏极 (id) @ 25°c:25A (Tc)
驱动电压(最大 rds on,最小 rds on):10V
rds on (max) @ id, vgs:85mOhm @ 16A, 10V
vgs(th) (最大值) @ id:4.8V @ 700µA
栅极电荷 (qg) (max) @ vgs:9.3 nC @ 10 V
vgs (最大值):±20V
输入电容 (ciss) (max) @ vds:600 pF @ 400 V
场效应管特征:-
功耗(最大值):96W (Tc)
工作温度:-55°C ~ 150°C (TJ)
安装类型:Surface Mount
供应商设备包:3-PQFN (8x8)
包/箱:3-PowerDFN

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