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EFC6601R-A-TR

EFC6601R-A-TR

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制造商部分
EFC6601R-A-TR
制造商
Sanyo Semiconductor/ON Semiconductor
描述
MOSFET 2N-CH EFCP
类别
分立半导体产品
家庭
晶体管 - 场效应晶体管、场效应晶体管 - 阵列
系列
-
有存货
8005
在线数据表
-
询问

Product Specifications

Type 描述
系列:-
包裹:Tape & Reel (TR)
零件状态:Active
场效应管类型:2 N-Channel (Dual) Common Drain
场效应管特征:Logic Level Gate, 2.5V Drive
漏源电压 (vdss):-
电流 - 连续漏极 (id) @ 25°c:-
rds on (max) @ id, vgs:-
vgs(th) (最大值) @ id:-
栅极电荷 (qg) (max) @ vgs:48nC @ 4.5V
输入电容 (ciss) (max) @ vds:-
功率 - 最大值:2W
工作温度:150°C (TJ)
安装类型:Surface Mount
包/箱:6-XFBGA, FCBGA
供应商设备包:EFCP2718-6CE-020

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