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EPC2103ENGRT

EPC2103ENGRT

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制造商部分
EPC2103ENGRT
制造商
EPC
描述
GANFET TRANS SYM HALF BRDG 80V
类别
分立半导体产品
家庭
晶体管 - 场效应晶体管、场效应晶体管 - 阵列
系列
-
有存货
7858
在线数据表
-
询问

Product Specifications

Type 描述
系列:eGaN®
包裹:Tape & Reel (TR)Cut Tape (CT)
零件状态:Discontinued at Digi-Key
场效应管类型:2 N-Channel (Half Bridge)
场效应管特征:GaNFET (Gallium Nitride)
漏源电压 (vdss):80V
电流 - 连续漏极 (id) @ 25°c:23A
rds on (max) @ id, vgs:5.5mOhm @ 20A, 5V
vgs(th) (最大值) @ id:2.5V @ 7mA
栅极电荷 (qg) (max) @ vgs:6.5nC @ 5V
输入电容 (ciss) (max) @ vds:7600pF @ 40V
功率 - 最大值:-
工作温度:-
安装类型:Surface Mount
包/箱:Die
供应商设备包:Die

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