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FDG6321C-F169

FDG6321C-F169

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制造商部分
FDG6321C-F169
制造商
Sanyo Semiconductor/ON Semiconductor
描述
INTEGRATED CIRCUIT
类别
分立半导体产品
家庭
晶体管 - 场效应晶体管、场效应晶体管 - 阵列
系列
-
有存货
7770
在线数据表
-
询问

Product Specifications

Type 描述
系列:-
包裹:Bulk
零件状态:Obsolete
场效应管类型:N and P-Channel
场效应管特征:Logic Level Gate
漏源电压 (vdss):25V
电流 - 连续漏极 (id) @ 25°c:500mA (Ta), 410mA (Ta)
rds on (max) @ id, vgs:450mOhm @ 500mA, 4.5V, 1.1Ohm @ 410mA, 4.5V
vgs(th) (最大值) @ id:1.5V @ 250µA
栅极电荷 (qg) (max) @ vgs:2.3nC @ 4.5V, 1.5nC @ 4.5V
输入电容 (ciss) (max) @ vds:50pF @ 10V, 62pF @ 10V
功率 - 最大值:300mW
工作温度:-55°C ~ 150°C (TJ)
安装类型:Surface Mount
包/箱:6-TSSOP, SC-88, SOT-363
供应商设备包:SC-88/SC70-6/SOT-363

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