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IRF7757TR

IRF7757TR

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制造商部分
IRF7757TR
制造商
IR (Infineon Technologies)
描述
MOSFET 2N-CH 20V 4.8A TSSOP-8
类别
分立半导体产品
家庭
晶体管 - 场效应晶体管、场效应晶体管 - 阵列
系列
-
有存货
7501
在线数据表
-
询问

Product Specifications

Type 描述
系列:HEXFET®
包裹:Tape & Reel (TR)
零件状态:Obsolete
场效应管类型:2 N-Channel (Dual)
场效应管特征:Logic Level Gate
漏源电压 (vdss):20V
电流 - 连续漏极 (id) @ 25°c:4.8A
rds on (max) @ id, vgs:35mOhm @ 4.8A, 4.5V
vgs(th) (最大值) @ id:1.2V @ 250µA
栅极电荷 (qg) (max) @ vgs:23nC @ 4.5V
输入电容 (ciss) (max) @ vds:1340pF @ 15V
功率 - 最大值:1.2W
工作温度:-55°C ~ 150°C (TJ)
安装类型:Surface Mount
包/箱:8-TSSOP (0.173", 4.40mm Width)
供应商设备包:8-TSSOP

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