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PMGD400UN,115

PMGD400UN,115

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制造商部分
PMGD400UN,115
制造商
NXP Semiconductors
描述
MOSFET 2N-CH 30V 0.71A 6TSSOP
类别
分立半导体产品
家庭
晶体管 - 场效应晶体管、场效应晶体管 - 阵列
系列
-
有存货
7458
在线数据表
-
询问

Product Specifications

Type 描述
系列:TrenchMOS™
包裹:Tape & Reel (TR)Cut Tape (CT)
零件状态:Obsolete
场效应管类型:2 N-Channel (Dual)
场效应管特征:Logic Level Gate
漏源电压 (vdss):30V
电流 - 连续漏极 (id) @ 25°c:710mA
rds on (max) @ id, vgs:480mOhm @ 200mA, 4.5V
vgs(th) (最大值) @ id:1V @ 250µA
栅极电荷 (qg) (max) @ vgs:0.89nC @ 4.5V
输入电容 (ciss) (max) @ vds:43pF @ 25V
功率 - 最大值:410mW
工作温度:-55°C ~ 150°C (TJ)
安装类型:Surface Mount
包/箱:6-TSSOP, SC-88, SOT-363
供应商设备包:6-TSSOP

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