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STS5DP3LLH6

STS5DP3LLH6

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制造商部分
STS5DP3LLH6
制造商
STMicroelectronics
描述
MOSFET 2 P-CHANNEL 30V 5A 8SO
类别
分立半导体产品
家庭
晶体管 - 场效应晶体管、场效应晶体管 - 阵列
系列
-
有存货
7385
在线数据表
-
询问

Product Specifications

Type 描述
系列:DeepGATE™, STripFET™ H6
包裹:Tape & Reel (TR)
零件状态:Obsolete
场效应管类型:2 P-Channel (Dual)
场效应管特征:Logic Level Gate, 4.5V Drive
漏源电压 (vdss):30V
电流 - 连续漏极 (id) @ 25°c:5A (Ta)
rds on (max) @ id, vgs:56mOhm @ 2.5A, 10V
vgs(th) (最大值) @ id:2.5V @ 250µA
栅极电荷 (qg) (max) @ vgs:6nC @ 4.5V
输入电容 (ciss) (max) @ vds:639pF @ 25V
功率 - 最大值:2.7W
工作温度:150°C (TJ)
安装类型:Surface Mount
包/箱:8-SOIC (0.154", 3.90mm Width)
供应商设备包:8-SO

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