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SSM6N48FU,RF(D

SSM6N48FU,RF(D

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制造商部分
SSM6N48FU,RF(D
制造商
Toshiba Electronic Devices and Storage Corporation
描述
MOSFET 2N-CH 30V 0.1A
类别
分立半导体产品
家庭
晶体管 - 场效应晶体管、场效应晶体管 - 阵列
系列
-
有存货
7262
在线数据表
-
询问

Product Specifications

Type 描述
系列:-
包裹:Tape & Reel (TR)
零件状态:Obsolete
场效应管类型:2 N-Channel (Dual)
场效应管特征:Logic Level Gate, 2.5V Drive
漏源电压 (vdss):30V
电流 - 连续漏极 (id) @ 25°c:100mA (Ta)
rds on (max) @ id, vgs:3.2Ohm @ 10mA, 4V
vgs(th) (最大值) @ id:1.5V @ 100µA
栅极电荷 (qg) (max) @ vgs:-
输入电容 (ciss) (max) @ vds:15.1pF @ 3V
功率 - 最大值:300mW
工作温度:-55°C ~ 150°C (TJ)
安装类型:Surface Mount
包/箱:6-TSSOP, SC-88, SOT-363
供应商设备包:US6

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