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RJM0306JSP-01#J0

RJM0306JSP-01#J0

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制造商部分
RJM0306JSP-01#J0
制造商
Renesas Electronics America
描述
MOSFET 2N/2P-CH 30V 3.5A 8-SOP
类别
分立半导体产品
家庭
晶体管 - 场效应晶体管、场效应晶体管 - 阵列
系列
-
有存货
7178
在线数据表
-
询问

Product Specifications

Type 描述
系列:-
包裹:Tube
零件状态:Active
场效应管类型:2 N and 2 P-Channel (H-Bridge)
场效应管特征:Logic Level Gate, 4V Drive
漏源电压 (vdss):30V
电流 - 连续漏极 (id) @ 25°c:3.5A
rds on (max) @ id, vgs:65mOhm @ 2A, 10V
vgs(th) (最大值) @ id:-
栅极电荷 (qg) (max) @ vgs:5nC @ 10V
输入电容 (ciss) (max) @ vds:290pF @ 10V
功率 - 最大值:2.2W
工作温度:-
安装类型:Surface Mount
包/箱:8-SOIC (0.154", 3.90mm Width)
供应商设备包:8-SOP

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