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SI5504DC-T1-GE3

SI5504DC-T1-GE3

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制造商部分
SI5504DC-T1-GE3
制造商
Vishay / Siliconix
描述
MOSFET N/P-CH 30V 2.9A 1206-8
类别
分立半导体产品
家庭
晶体管 - 场效应晶体管、场效应晶体管 - 阵列
系列
-
有存货
7114
在线数据表
-
询问

Product Specifications

Type 描述
系列:TrenchFET®
包裹:Tape & Reel (TR)
零件状态:Obsolete
场效应管类型:N and P-Channel
场效应管特征:Logic Level Gate
漏源电压 (vdss):30V
电流 - 连续漏极 (id) @ 25°c:2.9A, 2.1A
rds on (max) @ id, vgs:85mOhm @ 2.9A, 10V
vgs(th) (最大值) @ id:1V @ 250µA (Min)
栅极电荷 (qg) (max) @ vgs:7.5nC @ 10V
输入电容 (ciss) (max) @ vds:-
功率 - 最大值:1.1W
工作温度:-55°C ~ 150°C (TJ)
安装类型:Surface Mount
包/箱:8-SMD, Flat Lead
供应商设备包:1206-8 ChipFET™

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