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MVDF2C03HDR2G

MVDF2C03HDR2G

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制造商部分
MVDF2C03HDR2G
制造商
Sanyo Semiconductor/ON Semiconductor
描述
MOSFET N/P-CH 30V 4.1A/3A 8SOIC
类别
分立半导体产品
家庭
晶体管 - 场效应晶体管、场效应晶体管 - 阵列
系列
-
有存货
7061
在线数据表
-
询问

Product Specifications

Type 描述
系列:-
包裹:Tape & Reel (TR)
零件状态:Obsolete
场效应管类型:N and P-Channel Complementary
场效应管特征:Logic Level Gate
漏源电压 (vdss):30V
电流 - 连续漏极 (id) @ 25°c:4.1A, 3A
rds on (max) @ id, vgs:70mOhm @ 3A, 10V
vgs(th) (最大值) @ id:3V @ 250µA
栅极电荷 (qg) (max) @ vgs:16nC @ 10V
输入电容 (ciss) (max) @ vds:630pF @ 24V
功率 - 最大值:2W
工作温度:-55°C ~ 150°C (TJ)
安装类型:Surface Mount
包/箱:8-SOIC (0.154", 3.90mm Width)
供应商设备包:8-SOIC

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