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1N8026-GA

1N8026-GA

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制造商部分
1N8026-GA
制造商
GeneSiC Semiconductor
描述
DIODE SILICON 1.2KV 8A TO257
类别
分立半导体产品
家庭
二极管 - 整流器 - 单
系列
-
有存货
4283
在线数据表
-
询问

Product Specifications

Type 描述
系列:-
包裹:Tube
零件状态:Obsolete
二极管型:Silicon Carbide Schottky
电压 - 直流反向 (vr) (max):1200 V
电流 - 平均整流 (io):8A (DC)
电压 - 正向 (vf) (max) @ if:1.6 V @ 2.5 A
速度:No Recovery Time > 500mA (Io)
反向恢复时间 (trr):0 ns
电流 - 反向泄漏@ vr:10 µA @ 1200 V
电容@vr, f:237pF @ 1V, 1MHz
安装类型:Through Hole
包/箱:TO-257-3
供应商设备包:TO-257
工作温度 - 结:-55°C ~ 250°C

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