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2N6661JTVP02

2N6661JTVP02

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制造商部分
2N6661JTVP02
制造商
Vishay / Siliconix
描述
MOSFET N-CH 90V 860MA TO39
类别
分立半导体产品
家庭
晶体管 - 场效应晶体管、场效应晶体管 - 单
系列
-
有存货
8009
在线数据表
-
询问

Product Specifications

Type 描述
系列:-
包裹:Tube
零件状态:Obsolete
场效应管类型:N-Channel
技术:MOSFET (Metal Oxide)
漏源电压 (vdss):90 V
电流 - 连续漏极 (id) @ 25°c:860mA (Tc)
驱动电压(最大 rds on,最小 rds on):5V, 10V
rds on (max) @ id, vgs:4Ohm @ 1A, 10V
vgs(th) (最大值) @ id:2V @ 1mA
栅极电荷 (qg) (max) @ vgs:-
vgs (最大值):±20V
输入电容 (ciss) (max) @ vds:50 pF @ 25 V
场效应管特征:-
功耗(最大值):725mW (Ta), 6.25W (Tc)
工作温度:-55°C ~ 150°C (TJ)
安装类型:Through Hole
供应商设备包:TO-39
包/箱:TO-205AD, TO-39-3 Metal Can

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