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| Type | 描述 |
|---|---|
| 系列: | HEXFET® |
| 包裹: | Tape & Reel (TR) |
| 零件状态: | Obsolete |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 30 V |
| 电流 - 连续漏极 (id) @ 25°c: | 35A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 4.5V, 10V |
| rds on (max) @ id, vgs: | 31mOhm @ 21A, 10V |
| vgs(th) (最大值) @ id: | 1V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 26 nC @ 4.5 V |
| vgs (最大值): | ±16V |
| 输入电容 (ciss) (max) @ vds: | 870 pF @ 25 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 68W (Tc) |
| 工作温度: | -55°C ~ 175°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | D-Pak |
| 包/箱: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| 图片 | 零件号 | 描述 | Stock / Unit Price |
|---|---|---|---|
 |
STD50NH02L-1STMicroelectronics |
MOSFET N-CH 24V 50A I-PAK |
有存货: 0 $0.00000 |
 |
IRL5602STRLIR (Infineon Technologies) |
MOSFET P-CH 20V 24A D2PAK |
有存货: 0 $0.00000 |
 |
RJL6013DPE-00#J3Renesas Electronics America |
MOSFET N-CH 600V 11A 4LDPAK |
有存货: 0 $0.00000 |
 |
IPB048N06LGATMA1IR (Infineon Technologies) |
MOSFET N-CH 60V 100A D2PAK |
有存货: 0 $0.00000 |
 |
SIHW23N60E-GE3Vishay / Siliconix |
MOSFET N-CH 600V 23A TO247AD |
有存货: 0 $0.00000 |
 |
STW25N95K3STMicroelectronics |
MOSFET N-CH 950V 22A TO247 |
有存货: 0 $0.00000 |
 |
NTB5404NT4GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 40V 167A D2PAK |
有存货: 0 $0.00000 |
 |
IRF640STMicroelectronics |
MOSFET N-CH 200V 18A TO220AB |
有存货: 0 $0.00000 |
 |
BUK7628-100A/C,118NXP Semiconductors |
MOSFET N-CH 100V 47A D2PAK |
有存货: 0 $0.00000 |
 |
IRF7470TRIR (Infineon Technologies) |
MOSFET N-CH 40V 10A 8SO |
有存货: 0 $0.00000 |
