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| Type | 描述 |
|---|---|
| 系列: | HEXFET® |
| 包裹: | Tube |
| 零件状态: | Obsolete |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 20 V |
| 电流 - 连续漏极 (id) @ 25°c: | 75A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 2.8V, 10V |
| rds on (max) @ id, vgs: | 9mOhm @ 15A, 10V |
| vgs(th) (最大值) @ id: | 2V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 35 nC @ 4.5 V |
| vgs (最大值): | ±12V |
| 输入电容 (ciss) (max) @ vds: | 2410 pF @ 10 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 88W (Tc) |
| 工作温度: | -55°C ~ 175°C (TJ) |
| 安装类型: | Through Hole |
| 供应商设备包: | IPAK (TO-251) |
| 包/箱: | TO-251-3 Short Leads, IPak, TO-251AA |
| 图片 | 零件号 | 描述 | Stock / Unit Price |
|---|---|---|---|
 |
AON7556Alpha and Omega Semiconductor, Inc. |
MOSFET N-CH 30V 12A/12A 8DFN |
有存货: 0 $0.00000 |
 |
IRF6611TRPBFIR (Infineon Technologies) |
MOSFET N-CH 30V 32A DIRECTFET |
有存货: 0 $0.00000 |
 |
IPD65R600E6BTMA1IR (Infineon Technologies) |
MOSFET N-CH 650V 7.3A TO252-3 |
有存货: 0 $0.00000 |
 |
SUB75P03-07-E3Vishay / Siliconix |
MOSFET P-CH 30V 75A TO263 |
有存货: 0 $0.00000 |
 |
NTMS4706NR2Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 30V 6.4A 8SOIC |
有存货: 0 $0.00000 |
 |
FQPF9N08LSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 80V 7A TO220F |
有存货: 0 $0.00000 |
 |
IRF6665TR1PBFIR (Infineon Technologies) |
MOSFET N-CH 100V 4.2A DIRECTFET |
有存货: 0 $0.00000 |
 |
FDV301N_D87ZSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 25V 220MA SOT23 |
有存货: 0 $0.00000 |
 |
IRLI530NIR (Infineon Technologies) |
MOSFET N-CH 100V 12A TO220AB FP |
有存货: 0 $0.00000 |
 |
DMN63D1L-7Zetex Semiconductors (Diodes Inc.) |
MOSFET N-CH 60V 380MA SOT23 |
有存货: 0 $0.00000 |
