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IRFBL3703

IRFBL3703

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制造商部分
IRFBL3703
制造商
IR (Infineon Technologies)
描述
MOSFET N-CH 30V 260A SUPER D2PAK
类别
分立半导体产品
家庭
晶体管 - 场效应晶体管、场效应晶体管 - 单
系列
-
有存货
7034
在线数据表
-
询问

Product Specifications

Type 描述
系列:HEXFET®
包裹:Tube
零件状态:Obsolete
场效应管类型:N-Channel
技术:MOSFET (Metal Oxide)
漏源电压 (vdss):30 V
电流 - 连续漏极 (id) @ 25°c:260A (Tc)
驱动电压(最大 rds on,最小 rds on):7V, 10V
rds on (max) @ id, vgs:2.5mOhm @ 76A, 10V
vgs(th) (最大值) @ id:4V @ 250µA
栅极电荷 (qg) (max) @ vgs:209 nC @ 10 V
vgs (最大值):±20V
输入电容 (ciss) (max) @ vds:8250 pF @ 25 V
场效应管特征:-
功耗(最大值):3.8W (Ta), 300W (Tc)
工作温度:-
安装类型:Surface Mount
供应商设备包:SUPER D2-PAK
包/箱:Super D2-Pak

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