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FDN338P_G

FDN338P_G

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制造商部分
FDN338P_G
制造商
Sanyo Semiconductor/ON Semiconductor
描述
MOSFET P-CH 20V 1.6A SUPERSOT3
类别
分立半导体产品
家庭
晶体管 - 场效应晶体管、场效应晶体管 - 单
系列
-
有存货
7007
在线数据表
-
询问

Product Specifications

Type 描述
系列:PowerTrench®
包裹:Bulk
零件状态:Obsolete
场效应管类型:P-Channel
技术:MOSFET (Metal Oxide)
漏源电压 (vdss):20 V
电流 - 连续漏极 (id) @ 25°c:1.6A (Ta)
驱动电压(最大 rds on,最小 rds on):2.5V, 4.5V
rds on (max) @ id, vgs:115mOhm @ 1.6A, 4.5V
vgs(th) (最大值) @ id:1.5V @ 250µA
栅极电荷 (qg) (max) @ vgs:6.2 nC @ 4.5 V
vgs (最大值):±8V
输入电容 (ciss) (max) @ vds:451 pF @ 10 V
场效应管特征:-
功耗(最大值):500mW (Ta)
工作温度:-55°C ~ 150°C (TJ)
安装类型:Surface Mount
供应商设备包:SuperSOT-3
包/箱:TO-236-3, SC-59, SOT-23-3

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