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IRF7663

IRF7663

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制造商部分
IRF7663
制造商
IR (Infineon Technologies)
描述
MOSFET P-CH 20V 8.2A MICRO8
类别
分立半导体产品
家庭
晶体管 - 场效应晶体管、场效应晶体管 - 单
系列
-
有存货
6548
在线数据表
-
询问

Product Specifications

Type 描述
系列:HEXFET®
包裹:Tube
零件状态:Obsolete
场效应管类型:P-Channel
技术:MOSFET (Metal Oxide)
漏源电压 (vdss):20 V
电流 - 连续漏极 (id) @ 25°c:8.2A (Ta)
驱动电压(最大 rds on,最小 rds on):2.5V, 4.5V
rds on (max) @ id, vgs:20mOhm @ 7A, 4.5V
vgs(th) (最大值) @ id:1.2V @ 250µA
栅极电荷 (qg) (max) @ vgs:45 nC @ 5 V
vgs (最大值):±12V
输入电容 (ciss) (max) @ vds:2520 pF @ 10 V
场效应管特征:-
功耗(最大值):1.8W (Ta)
工作温度:-
安装类型:Surface Mount
供应商设备包:Micro8™
包/箱:8-TSSOP, 8-MSOP (0.118", 3.00mm Width)

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