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| Type | 描述 |
|---|---|
| 系列: | HEXFET® |
| 包裹: | Tube |
| 零件状态: | Obsolete |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 150 V |
| 电流 - 连续漏极 (id) @ 25°c: | 41A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 10V |
| rds on (max) @ id, vgs: | 45mOhm @ 25A, 10V |
| vgs(th) (最大值) @ id: | 4.5V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 107 nC @ 10 V |
| vgs (最大值): | ±30V |
| 输入电容 (ciss) (max) @ vds: | 2260 pF @ 25 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 200W (Tc) |
| 工作温度: | -55°C ~ 175°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | D2PAK |
| 包/箱: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| 图片 | 零件号 | 描述 | Stock / Unit Price |
|---|---|---|---|
 |
NTMS4404NR2Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 30V 7A 8SOIC |
有存货: 0 $0.00000 |
 |
STB70N10F4STMicroelectronics |
MOSFET N-CH 100V 65A D2PAK |
有存货: 0 $0.00000 |
 |
RJK6032DPD-00#J2Renesas Electronics America |
MOSFET N-CH 600V 3A MP3A |
有存货: 0 $0.00000 |
 |
AUIRFS3306IR (Infineon Technologies) |
MOSFET N-CH 60V 120A D2PAK |
有存货: 0 $0.00000 |
 |
RJL6013DPE-WS#J3Renesas Electronics America |
MOSFET N-CH 600V 11A 4LDPAK |
有存货: 0 $0.00000 |
 |
IRF6638TR1PBFIR (Infineon Technologies) |
MOSFET N-CH 30V 25A DIRECTFET |
有存货: 0 $0.00000 |
 |
IRLR4343PBFIR (Infineon Technologies) |
MOSFET N-CH 55V 26A DPAK |
有存货: 0 $0.00000 |
 |
SI4324DY-T1-E3Vishay / Siliconix |
MOSFET N-CH 30V 36A 8SO |
有存货: 0 $0.00000 |
 |
2SK4065-DL-ESanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 75V 100A SMP-FD |
有存货: 0 $0.00000 |
 |
IRFIB8N50KVishay / Siliconix |
MOSFET N-CH 500V 6.7A TO220-3 |
有存货: 0 $0.00000 |
