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| Type | 描述 |
|---|---|
| 系列: | HEXFET® |
| 包裹: | Tape & Reel (TR) |
| 零件状态: | Obsolete |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 30 V |
| 电流 - 连续漏极 (id) @ 25°c: | 61A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 4.5V, 10V |
| rds on (max) @ id, vgs: | 13mOhm @ 15A, 10V |
| vgs(th) (最大值) @ id: | 3V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 19 nC @ 4.5 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 1990 pF @ 15 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 87W (Tc) |
| 工作温度: | -55°C ~ 175°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | D-Pak |
| 包/箱: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| 图片 | 零件号 | 描述 | Stock / Unit Price |
|---|---|---|---|
 |
SPB20N60S5ATMA1IR (Infineon Technologies) |
MOSFET N-CH 600V 20A TO263-3 |
有存货: 0 $0.00000 |
 |
IRF9620STRRVishay / Siliconix |
MOSFET P-CH 200V 3.5A D2PAK |
有存货: 0 $0.00000 |
 |
SPI11N65C3XKSA1IR (Infineon Technologies) |
MOSFET N-CH 650V 11A TO262-3 |
有存货: 0 $0.00000 |
 |
IPS09N03LB GIR (Infineon Technologies) |
MOSFET N-CH 30V 50A TO251-3 |
有存货: 0 $0.00000 |
 |
SPN01N60C3IR (Infineon Technologies) |
MOSFET N-CH 650V 300MA SOT223-4 |
有存货: 0 $0.00000 |
 |
FQP13N50C_F105Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 500V 13A TO220-3 |
有存货: 0 $0.00000 |
 |
IRF7453TRPBFIR (Infineon Technologies) |
MOSFET N-CH 250V 2.2A 8SO |
有存货: 0 $0.00000 |
 |
2SK3670,F(JToshiba Electronic Devices and Storage Corporation |
MOSFET N-CH TO92MOD |
有存货: 0 $0.00000 |
 |
IPB06N03LAIR (Infineon Technologies) |
MOSFET N-CH 25V 50A TO263-3 |
有存货: 0 $0.00000 |
 |
SI7491DP-T1-GE3Vishay / Siliconix |
MOSFET P-CH 30V 11A PPAK SO-8 |
有存货: 0 $0.00000 |
