图片仅供参考，请联系我们获取真实图片
| Type | 描述 |
|---|---|
| 系列: | PowerMESH™ II |
| 包裹: | Tube |
| 零件状态: | Obsolete |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 600 V |
| 电流 - 连续漏极 (id) @ 25°c: | 6A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 10V |
| rds on (max) @ id, vgs: | 1.2Ohm @ 3A, 10V |
| vgs(th) (最大值) @ id: | 4V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 45.5 nC @ 10 V |
| vgs (最大值): | ±30V |
| 输入电容 (ciss) (max) @ vds: | 1020 pF @ 25 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 125W (Tc) |
| 工作温度: | 150°C (TJ) |
| 安装类型: | Through Hole |
| 供应商设备包: | TO-220AB |
| 包/箱: | TO-220-3 |
| 图片 | 零件号 | 描述 | Stock / Unit Price |
|---|---|---|---|
 |
RJK5030DPD-00#J2Renesas Electronics America |
MOSFET N-CH 500V 5A MP3A |
有存货: 0 $0.00000 |
 |
IRF9610STRRVishay / Siliconix |
MOSFET P-CH 200V 1.8A D2PAK |
有存货: 0 $0.00000 |
 |
SPI11N65C3HKSA1IR (Infineon Technologies) |
MOSFET N-CH 650V 11A TO262-3 |
有存货: 0 $0.00000 |
 |
NTB65N02RGSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 25V 65A D2PAK |
有存货: 0 $0.00000 |
 |
SPB160N04S2L03DTMA1IR (Infineon Technologies) |
MOSFET N-CH 40V 160A TO263-7 |
有存货: 0 $0.00000 |
 |
IRF3708SPBFIR (Infineon Technologies) |
MOSFET N-CH 30V 62A D2PAK |
有存货: 0 $0.00000 |
 |
SI4403BDY-T1-E3Vishay / Siliconix |
MOSFET P-CH 20V 7.3A 8SO |
有存货: 0 $0.00000 |
 |
IXTH150N17TWickmann / Littelfuse |
MOSFET N-CH 175V 150A TO247 |
有存货: 0 $0.00000 |
 |
STI20N60M2-EPSTMicroelectronics |
MOSFET N-CHANNEL 600V 13A TO220 |
有存货: 0 $0.00000 |
 |
IRFR9N20DTRIR (Infineon Technologies) |
MOSFET N-CH 200V 9.4A DPAK |
有存货: 0 $0.00000 |
