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SI1069X-T1-GE3

SI1069X-T1-GE3

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制造商部分
SI1069X-T1-GE3
制造商
Vishay / Siliconix
描述
MOSFET P-CH 20V 0.94A SC89-6
类别
分立半导体产品
家庭
晶体管 - 场效应晶体管、场效应晶体管 - 单
系列
-
有存货
4875
在线数据表
-
询问

Product Specifications

Type 描述
系列:TrenchFET®
包裹:Tape & Reel (TR)Cut Tape (CT)
零件状态:Obsolete
场效应管类型:P-Channel
技术:MOSFET (Metal Oxide)
漏源电压 (vdss):20 V
电流 - 连续漏极 (id) @ 25°c:940mA (Ta)
驱动电压(最大 rds on,最小 rds on):2.5V, 4.5V
rds on (max) @ id, vgs:184mOhm @ 940mA, 4.5V
vgs(th) (最大值) @ id:1.5V @ 250µA
栅极电荷 (qg) (max) @ vgs:6.86 nC @ 5 V
vgs (最大值):±12V
输入电容 (ciss) (max) @ vds:308 pF @ 10 V
场效应管特征:-
功耗(最大值):236mW (Ta)
工作温度:-55°C ~ 150°C (TJ)
安装类型:Surface Mount
供应商设备包:SC-89-6
包/箱:SOT-563, SOT-666

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