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GA06JT12-247

GA06JT12-247

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制造商部分
GA06JT12-247
制造商
GeneSiC Semiconductor
描述
TRANS SJT 1200V 6A TO247AB
类别
分立半导体产品
家庭
晶体管 - 场效应晶体管、场效应晶体管 - 单
系列
-
有存货
4692
在线数据表
-
询问

Product Specifications

Type 描述
系列:-
包裹:Tube
零件状态:Obsolete
场效应管类型:-
技术:SiC (Silicon Carbide Junction Transistor)
漏源电压 (vdss):1200 V
电流 - 连续漏极 (id) @ 25°c:6A (Tc) (90°C)
驱动电压(最大 rds on,最小 rds on):-
rds on (max) @ id, vgs:220mOhm @ 6A
vgs(th) (最大值) @ id:-
栅极电荷 (qg) (max) @ vgs:-
vgs (最大值):-
输入电容 (ciss) (max) @ vds:-
场效应管特征:-
功耗(最大值):-
工作温度:175°C (TJ)
安装类型:Through Hole
供应商设备包:TO-247AB
包/箱:TO-247-3

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