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SI3475DV-T1-E3

SI3475DV-T1-E3

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制造商部分
SI3475DV-T1-E3
制造商
Vishay / Siliconix
描述
MOSFET P-CH 200V 950MA 6TSOP
类别
分立半导体产品
家庭
晶体管 - 场效应晶体管、场效应晶体管 - 单
系列
-
有存货
4542
在线数据表
-
询问

Product Specifications

Type 描述
系列:TrenchFET®
包裹:Tape & Reel (TR)Cut Tape (CT)
零件状态:Obsolete
场效应管类型:P-Channel
技术:MOSFET (Metal Oxide)
漏源电压 (vdss):200 V
电流 - 连续漏极 (id) @ 25°c:950mA (Tc)
驱动电压(最大 rds on,最小 rds on):6V, 10V
rds on (max) @ id, vgs:1.61Ohm @ 900mA, 10V
vgs(th) (最大值) @ id:4V @ 250µA
栅极电荷 (qg) (max) @ vgs:18 nC @ 10 V
vgs (最大值):±20V
输入电容 (ciss) (max) @ vds:500 pF @ 50 V
场效应管特征:-
功耗(最大值):2W (Ta), 3.2W (Tc)
工作温度:-55°C ~ 150°C (TJ)
安装类型:Surface Mount
供应商设备包:6-TSOP
包/箱:SOT-23-6 Thin, TSOT-23-6

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