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| Type | 描述 |
|---|---|
| 系列: | HEXFET® |
| 包裹: | Tube |
| 零件状态: | Obsolete |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 150 V |
| 电流 - 连续漏极 (id) @ 25°c: | 33A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 10V |
| rds on (max) @ id, vgs: | 42mOhm @ 21A, 10V |
| vgs(th) (最大值) @ id: | 5V @ 100µA |
| 栅极电荷 (qg) (max) @ vgs: | 40 nC @ 10 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 1750 pF @ 50 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 144W (Tc) |
| 工作温度: | -55°C ~ 175°C (TJ) |
| 安装类型: | Through Hole |
| 供应商设备包: | TO-262 |
| 包/箱: | TO-262-3 Long Leads, I²Pak, TO-262AA |
| 图片 | 零件号 | 描述 | Stock / Unit Price |
|---|---|---|---|
 |
2SK1119(F)Toshiba Electronic Devices and Storage Corporation |
MOSFET N-CH 1000V 4A TO220AB |
有存货: 0 $0.00000 |
 |
STE250NS10STMicroelectronics |
MOSFET N-CH 100V 220A ISOTOP |
有存货: 0 $0.00000 |
 |
SPB07N60C3ATMA1IR (Infineon Technologies) |
MOSFET N-CH 650V 7.3A TO263-3 |
有存货: 0 $0.00000 |
 |
NVB190N65S3Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 650V 20A D2PAK-3 |
有存货: 0 $0.00000 |
 |
SIA430DJ-T4-GE3Vishay / Siliconix |
MOSFET N-CH 20V 12A/12A PPAK |
有存货: 0 $0.00000 |
 |
APT15F60SMicrosemi |
MOSFET N-CH 600V 16A D3PAK |
有存货: 0 $0.00000 |
 |
IPI100N08N3GHKSA1IR (Infineon Technologies) |
MOSFET N-CH 80V 70A TO262-3 |
有存货: 0 $0.00000 |
 |
IRFBC40LCSVishay / Siliconix |
MOSFET N-CH 600V 6.2A D2PAK |
有存货: 0 $0.00000 |
 |
IPU105N03L GIR (Infineon Technologies) |
MOSFET N-CH 30V 35A TO251-3 |
有存货: 0 $0.00000 |
 |
STP8NM60NSTMicroelectronics |
MOSFET N-CH 600V 7A TO220AB |
有存货: 0 $0.00000 |
