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TK4A60DB(STA4,Q,M)

TK4A60DB(STA4,Q,M)

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制造商部分
TK4A60DB(STA4,Q,M)
制造商
Toshiba Electronic Devices and Storage Corporation
描述
MOSFET N-CH 600V 3.7A TO220SIS
类别
分立半导体产品
家庭
晶体管 - 场效应晶体管、场效应晶体管 - 单
系列
-
有存货
4316
在线数据表
-
询问

Product Specifications

Type 描述
系列:π-MOSVII
包裹:Tube
零件状态:Last Time Buy
场效应管类型:N-Channel
技术:MOSFET (Metal Oxide)
漏源电压 (vdss):600 V
电流 - 连续漏极 (id) @ 25°c:3.7A (Ta)
驱动电压(最大 rds on,最小 rds on):10V
rds on (max) @ id, vgs:2Ohm @ 1.9A, 10V
vgs(th) (最大值) @ id:4.4V @ 1mA
栅极电荷 (qg) (max) @ vgs:11 nC @ 10 V
vgs (最大值):±30V
输入电容 (ciss) (max) @ vds:540 pF @ 25 V
场效应管特征:-
功耗(最大值):35W (Tc)
工作温度:150°C (TJ)
安装类型:Through Hole
供应商设备包:TO-220SIS
包/箱:TO-220-3 Full Pack

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