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SI1304BDL-T1-E3

SI1304BDL-T1-E3

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制造商部分
SI1304BDL-T1-E3
制造商
Vishay / Siliconix
描述
MOSFET N-CH 30V 900MA SC70-3
类别
分立半导体产品
家庭
晶体管 - 场效应晶体管、场效应晶体管 - 单
系列
-
有存货
4124
在线数据表
-
询问

Product Specifications

Type 描述
系列:TrenchFET®
包裹:Tape & Reel (TR)Cut Tape (CT)
零件状态:Obsolete
场效应管类型:N-Channel
技术:MOSFET (Metal Oxide)
漏源电压 (vdss):30 V
电流 - 连续漏极 (id) @ 25°c:900mA (Tc)
驱动电压(最大 rds on,最小 rds on):2.5V, 4.5V
rds on (max) @ id, vgs:270mOhm @ 900mA, 4.5V
vgs(th) (最大值) @ id:1.3V @ 250µA
栅极电荷 (qg) (max) @ vgs:2.7 nC @ 4.5 V
vgs (最大值):±12V
输入电容 (ciss) (max) @ vds:100 pF @ 15 V
场效应管特征:-
功耗(最大值):340mW (Ta), 370mW (Tc)
工作温度:-55°C ~ 150°C (TJ)
安装类型:Surface Mount
供应商设备包:SC-70-3
包/箱:SC-70, SOT-323

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