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FDC2612_F095

FDC2612_F095

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制造商部分
FDC2612_F095
制造商
Sanyo Semiconductor/ON Semiconductor
描述
MOSFET N-CH 200V 1.1A SUPERSOT6
类别
分立半导体产品
家庭
晶体管 - 场效应晶体管、场效应晶体管 - 单
系列
-
有存货
3568
在线数据表
-
询问

Product Specifications

Type 描述
系列:PowerTrench®
包裹:Tape & Reel (TR)
零件状态:Obsolete
场效应管类型:N-Channel
技术:MOSFET (Metal Oxide)
漏源电压 (vdss):200 V
电流 - 连续漏极 (id) @ 25°c:1.1A (Ta)
驱动电压(最大 rds on,最小 rds on):10V
rds on (max) @ id, vgs:725mOhm @ 1.1A, 10V
vgs(th) (最大值) @ id:4.5V @ 250µA
栅极电荷 (qg) (max) @ vgs:11 nC @ 10 V
vgs (最大值):±20V
输入电容 (ciss) (max) @ vds:234 pF @ 100 V
场效应管特征:-
功耗(最大值):1.6W (Ta)
工作温度:-55°C ~ 150°C (TJ)
安装类型:Surface Mount
供应商设备包:SuperSOT™-6
包/箱:SOT-23-6 Thin, TSOT-23-6

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