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2N7000,126

2N7000,126

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制造商部分
2N7000,126
制造商
NXP Semiconductors
描述
MOSFET N-CH 60V 300MA TO92-3
类别
分立半导体产品
家庭
晶体管 - 场效应晶体管、场效应晶体管 - 单
系列
-
有存货
3178
在线数据表
-
询问

Product Specifications

Type 描述
系列:TrenchMOS™
包裹:Tape & Box (TB)
零件状态:Obsolete
场效应管类型:N-Channel
技术:MOSFET (Metal Oxide)
漏源电压 (vdss):60 V
电流 - 连续漏极 (id) @ 25°c:300mA (Tc)
驱动电压(最大 rds on,最小 rds on):4.5V, 10V
rds on (max) @ id, vgs:5Ohm @ 500mA, 10V
vgs(th) (最大值) @ id:2V @ 1mA
栅极电荷 (qg) (max) @ vgs:-
vgs (最大值):±30V
输入电容 (ciss) (max) @ vds:40 pF @ 10 V
场效应管特征:-
功耗(最大值):830mW (Ta)
工作温度:-55°C ~ 150°C (TJ)
安装类型:Through Hole
供应商设备包:TO-92-3
包/箱:TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

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