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BSS126 E6327

BSS126 E6327

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制造商部分
BSS126 E6327
制造商
IR (Infineon Technologies)
描述
MOSFET N-CH 600V 21MA SOT23-3
类别
分立半导体产品
家庭
晶体管 - 场效应晶体管、场效应晶体管 - 单
系列
-
有存货
2792
在线数据表
-
询问

Product Specifications

Type 描述
系列:SIPMOS®
包裹:Tape & Reel (TR)
零件状态:Obsolete
场效应管类型:N-Channel
技术:MOSFET (Metal Oxide)
漏源电压 (vdss):600 V
电流 - 连续漏极 (id) @ 25°c:21mA (Ta)
驱动电压(最大 rds on,最小 rds on):0V, 10V
rds on (max) @ id, vgs:500Ohm @ 16mA, 10V
vgs(th) (最大值) @ id:1.6V @ 8µA
栅极电荷 (qg) (max) @ vgs:2.1 nC @ 5 V
vgs (最大值):±20V
输入电容 (ciss) (max) @ vds:28 pF @ 25 V
场效应管特征:Depletion Mode
功耗(最大值):500mW (Ta)
工作温度:-55°C ~ 150°C (TJ)
安装类型:Surface Mount
供应商设备包:SOT-23-3
包/箱:TO-236-3, SC-59, SOT-23-3

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