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BTS282Z E3230

BTS282Z E3230

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制造商部分
BTS282Z E3230
制造商
IR (Infineon Technologies)
描述
MOSFET N-CH 49V 80A TO220-7
类别
分立半导体产品
家庭
晶体管 - 场效应晶体管、场效应晶体管 - 单
系列
-
有存货
1563
在线数据表
-
询问

Product Specifications

Type 描述
系列:TEMPFET®
包裹:Tube
零件状态:Obsolete
场效应管类型:N-Channel
技术:MOSFET (Metal Oxide)
漏源电压 (vdss):49 V
电流 - 连续漏极 (id) @ 25°c:80A (Tc)
驱动电压(最大 rds on,最小 rds on):4.5V, 10V
rds on (max) @ id, vgs:6.5mOhm @ 36A, 10V
vgs(th) (最大值) @ id:2V @ 240µA
栅极电荷 (qg) (max) @ vgs:232 nC @ 10 V
vgs (最大值):±20V
输入电容 (ciss) (max) @ vds:4800 pF @ 25 V
场效应管特征:Temperature Sensing Diode
功耗(最大值):300W (Tc)
工作温度:-40°C ~ 175°C (TJ)
安装类型:Through Hole
供应商设备包:P-TO220-7-230
包/箱:TO-220-7

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