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| Type | 描述 |
|---|---|
| 系列: | HEXFET® |
| 包裹: | Tube |
| 零件状态: | Obsolete |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 20 V |
| 电流 - 连续漏极 (id) @ 25°c: | 92A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 4.5V, 10V |
| rds on (max) @ id, vgs: | 6mOhm @ 15A, 10V |
| vgs(th) (最大值) @ id: | 2.45V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 24 nC @ 4.5 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 2150 pF @ 10 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 79W (Tc) |
| 工作温度: | -55°C ~ 175°C (TJ) |
| 安装类型: | Through Hole |
| 供应商设备包: | TO-262 |
| 包/箱: | TO-262-3 Long Leads, I²Pak, TO-262AA |
| 图片 | 零件号 | 描述 | Stock / Unit Price |
|---|---|---|---|
 |
STFILED524STMicroelectronics |
MOSFET N-CH 525V 4A I2PAKFP |
有存货: 0 $0.00000 |
 |
SI5402DC-T1-GE3Vishay / Siliconix |
MOSFET N-CH 30V 4.9A 1206-8 |
有存货: 0 $0.00000 |
 |
IPB65R190C7ATMA1IR (Infineon Technologies) |
MOSFET N-CH 650V 13A D2PAK |
有存货: 0 $0.00000 |
 |
FDB035AN06A0-F085Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 60V 22A D2PAK |
有存货: 0 $0.00000 |
 |
NTMFS4827NET3GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 30V 8.8A/58.5A 5DFN |
有存货: 0 $0.00000 |
 |
AOK10N90Alpha and Omega Semiconductor, Inc. |
MOSFET N-CH 900V 10A TO247 |
有存货: 0 $0.00000 |
 |
IRF7460IR (Infineon Technologies) |
MOSFET N-CH 20V 12A 8SO |
有存货: 0 $0.00000 |
 |
TSM1NB60SCT A3GTSC (Taiwan Semiconductor) |
MOSFET N-CH 600V 500MA TO92 |
有存货: 0 $0.00000 |
 |
IPB09N03LA GIR (Infineon Technologies) |
MOSFET N-CH 25V 50A TO263-3 |
有存货: 0 $0.00000 |
 |
NTMFS4122NT3GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 30V 9.1A 5DFN |
有存货: 0 $0.00000 |
