图片仅供参考，请联系我们获取真实图片
| Type | 描述 |
|---|---|
| 系列: | HEXFET® |
| 包裹: | Tape & Reel (TR) |
| 零件状态: | Obsolete |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 30 V |
| 电流 - 连续漏极 (id) @ 25°c: | 3.9A (Ta) |
| 驱动电压（最大 rds on，最小 rds on）: | 4V, 10V |
| rds on (max) @ id, vgs: | 45mOhm @ 3.9A, 10V |
| vgs(th) (最大值) @ id: | 2.4V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 14 nC @ 5 V |
| vgs (最大值): | ±16V |
| 输入电容 (ciss) (max) @ vds: | 530 pF @ 25 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 1W (Ta) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | SOT-223 |
| 包/箱: | TO-261-4, TO-261AA |
| 图片 | 零件号 | 描述 | Stock / Unit Price |
|---|---|---|---|
 |
2SK1775-ERenesas Electronics America |
MOSFET N-CH 900V 8A TO3P |
有存货: 0 $0.00000 |
 |
FQPF12P20Sanyo Semiconductor/ON Semiconductor |
MOSFET P-CH 200V 7.3A TO220F |
有存货: 0 $0.00000 |
 |
FQA6N80_F109Sanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 800V 6.3A TO3P |
有存货: 0 $0.00000 |
 |
IPD90R1K2C3BTMA1IR (Infineon Technologies) |
MOSFET N-CH 900V 5.1A TO252-3 |
有存货: 0 $0.00000 |
 |
IRLR3714ZIR (Infineon Technologies) |
MOSFET N-CH 20V 37A DPAK |
有存货: 0 $0.00000 |
 |
IRF830STRLVishay / Siliconix |
MOSFET N-CH 500V 4.5A D2PAK |
有存货: 0 $0.00000 |
 |
BUK7528-55,127NXP Semiconductors |
MOSFET N-CH 55V 40A TO220AB |
有存货: 0 $0.00000 |
 |
NX3008NBKT,115NXP Semiconductors |
MOSFET N-CH 30V 350MA SC75 |
有存货: 0 $0.00000 |
 |
RRS130N03TB1ROHM Semiconductor |
MOSFET N-CH 30V 13A 8SOP |
有存货: 0 $0.00000 |
 |
PSMN018-100PSFQNexperia |
MOSFET N-CH 100V 53A TO220AB |
有存货: 0 $0.00000 |
