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| Type | 描述 |
|---|---|
| 系列: | TrenchMOS™ |
| 包裹: | Tape & Reel (TR) |
| 零件状态: | Obsolete |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 30 V |
| 电流 - 连续漏极 (id) @ 25°c: | 5.2A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 4.5V, 10V |
| rds on (max) @ id, vgs: | 40mOhm @ 3A, 10V |
| vgs(th) (最大值) @ id: | 2V @ 1mA |
| 栅极电荷 (qg) (max) @ vgs: | 6.1 nC @ 4.5 V |
| vgs (最大值): | 20V |
| 输入电容 (ciss) (max) @ vds: | 495 pF @ 25 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 1.75W (Tc) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Surface Mount |
| 供应商设备包: | 6-TSOP |
| 包/箱: | SC-74, SOT-457 |
| 图片 | 零件号 | 描述 | Stock / Unit Price |
|---|---|---|---|
 |
IRF3708SIR (Infineon Technologies) |
MOSFET N-CH 30V 62A D2PAK |
有存货: 0 $0.00000 |
 |
FQP44N10FSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 100V 43.5A TO220-3 |
有存货: 0 $0.00000 |
 |
IPB06CN10N GIR (Infineon Technologies) |
MOSFET N-CH 100V 100A D2PAK |
有存货: 0 $0.00000 |
 |
SI3433BDV-T1-GE3Vishay / Siliconix |
MOSFET P-CH 20V 4.3A 6TSOP |
有存货: 0 $0.00000 |
 |
IRLD110Vishay / Siliconix |
MOSFET N-CH 100V 1A 4DIP |
有存货: 0 $0.00000 |
 |
MCP87055T-U/LCRoving Networks / Microchip Technology |
MOSFET N-CH 25V 60A 8PDFN |
有存货: 0 $0.00000 |
 |
SIA443DJ-T1-E3Vishay / Siliconix |
MOSFET P-CH 20V 9A PPAK SC70-6 |
有存货: 0 $0.00000 |
 |
R6035ENZC8ROHM Semiconductor |
MOSFET N-CH 600V 35A TO3PF |
有存货: 0 $0.00000 |
 |
SPI07N60C3HKSA1IR (Infineon Technologies) |
MOSFET N-CH 650V 7.3A TO262-3 |
有存货: 0 $0.00000 |
 |
SPP80N04S2-H4IR (Infineon Technologies) |
MOSFET N-CH 40V 80A TO220-3 |
有存货: 0 $0.00000 |
