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| Type | 描述 |
|---|---|
| 系列: | HEXFET® |
| 包裹: | Tube |
| 零件状态: | Obsolete |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 55 V |
| 电流 - 连续漏极 (id) @ 25°c: | 75A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 4.5V, 10V |
| rds on (max) @ id, vgs: | 8mOhm @ 52A, 10V |
| vgs(th) (最大值) @ id: | 3V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 60 nC @ 5 V |
| vgs (最大值): | ±16V |
| 输入电容 (ciss) (max) @ vds: | 2880 pF @ 25 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 130W (Tc) |
| 工作温度: | -55°C ~ 175°C (TJ) |
| 安装类型: | Through Hole |
| 供应商设备包: | TO-262 |
| 包/箱: | TO-262-3 Long Leads, I²Pak, TO-262AA |
| 图片 | 零件号 | 描述 | Stock / Unit Price |
|---|---|---|---|
 |
IRFZ14Vishay / Siliconix |
MOSFET N-CH 60V 10A TO220AB |
有存货: 0 $0.00000 |
 |
NVMFS5C670NLWFT1GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 60V 17A/71A 5DFN |
有存货: 0 $0.00000 |
 |
IPD50R650CEATMA1IR (Infineon Technologies) |
MOSFET N-CH 500V 6.1A TO252-3 |
有存货: 0 $0.00000 |
 |
H7N1002LS-ERenesas Electronics America |
MOSFET N-CH 100V 75A 4LDPAK |
有存货: 0 $0.00000 |
 |
NVD4808NT4GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 30V 10A/63A DPAK |
有存货: 0 $0.00000 |
 |
IXFK30N50QWickmann / Littelfuse |
MOSFET N-CH 500V 30A TO264AA |
有存货: 0 $0.00000 |
 |
FQPF10N60CFSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 600V 9A TO220F |
有存货: 0 $0.00000 |
 |
IXTH420N04T2Wickmann / Littelfuse |
MOSFET N-CH 40V 420A TO247 |
有存货: 0 $0.00000 |
 |
IPP26CN10NGHKSA1IR (Infineon Technologies) |
MOSFET N-CH 100V 35A TO220-3 |
有存货: 0 $0.00000 |
 |
IRF9393PBFIR (Infineon Technologies) |
MOSFET P-CH 30V 9.2A 8SO |
有存货: 0 $0.00000 |
