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| Type | 描述 |
|---|---|
| 系列: | MegaMOS™ |
| 包裹: | Tube |
| 零件状态: | Active |
| 场效应管类型: | N-Channel |
| 技术: | MOSFET (Metal Oxide) |
| 漏源电压 (vdss): | 300 V |
| 电流 - 连续漏极 (id) @ 25°c: | 110A (Tc) |
| 驱动电压（最大 rds on，最小 rds on）: | 10V |
| rds on (max) @ id, vgs: | 26mOhm @ 500mA, 10V |
| vgs(th) (最大值) @ id: | 4V @ 250µA |
| 栅极电荷 (qg) (max) @ vgs: | 390 nC @ 10 V |
| vgs (最大值): | ±20V |
| 输入电容 (ciss) (max) @ vds: | 7800 pF @ 25 V |
| 场效应管特征: | - |
| 功耗（最大值）: | 730W (Tc) |
| 工作温度: | -55°C ~ 150°C (TJ) |
| 安装类型: | Through Hole |
| 供应商设备包: | TO-264 (IXTK) |
| 包/箱: | TO-264-3, TO-264AA |
| 图片 | 零件号 | 描述 | Stock / Unit Price |
|---|---|---|---|
 |
BSP296NL6327HTSA1IR (Infineon Technologies) |
MOSFET N-CH 100V 1.2A SOT223-4 |
有存货: 0 $0.00000 |
 |
IPP80N06S3L-08IR (Infineon Technologies) |
MOSFET N-CH 55V 80A TO220-3 |
有存货: 0 $0.00000 |
 |
SPB35N10TIR (Infineon Technologies) |
MOSFET N-CH 100V 35A TO263-3 |
有存货: 0 $0.00000 |
 |
STB200NF04LSTMicroelectronics |
MOSFET N-CH 40V 120A D2PAK |
有存货: 0 $0.00000 |
 |
NTJS3157NT4GSanyo Semiconductor/ON Semiconductor |
MOSFET N-CH 20V 3.2A SC88/SC70-6 |
有存货: 0 $0.00000 |
 |
SI2334DS-T1-GE3Vishay / Siliconix |
MOSFET N-CH 30V 4.9A SOT23-3 |
有存货: 0 $0.00000 |
 |
2SK3943-ZP-E1-AYRenesas Electronics America |
MOSFET N-CH 40V 82A TO263 |
有存货: 0 $0.00000 |
 |
STU27N3LH5STMicroelectronics |
MOSFET N-CH 30V 27A IPAK |
有存货: 0 $0.00000 |
 |
IRFR3711ZTRLPBFIR (Infineon Technologies) |
MOSFET N-CH 20V 93A DPAK |
有存货: 0 $0.00000 |
 |
SI4398DY-T1-GE3Vishay / Siliconix |
MOSFET N-CH 20V 19A 8SO |
有存货: 0 $0.00000 |
