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TC58BYG1S3HBAI6

TC58BYG1S3HBAI6

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制造商部分
TC58BYG1S3HBAI6
制造商
Toshiba Memory America, Inc. (Kioxia America, Inc.)
描述
IC FLASH 2GBIT PARALLEL 67VFBGA
类别
集成电路
家庭
记忆
系列
-
有存货
338
在线数据表
-
询问

Product Specifications

Type 描述
系列:Benand™
包裹:Tray
零件状态:Active
内存类型:Non-Volatile
内存格式:FLASH
技术:FLASH - NAND (SLC)
内存大小:2Gb (256M x 8)
内存接口:Parallel
时钟频率:-
写周期时间 - 字,页:25ns
访问时间:25 ns
电压 - 电源:1.7V ~ 1.95V
工作温度:-40°C ~ 85°C (TA)
安装类型:Surface Mount
包/箱:67-VFBGA
供应商设备包:67-VFBGA (6.5x8)

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