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MT53E256M32D2DS-053 AAT:B TR

MT53E256M32D2DS-053 AAT:B TR

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制造商部分
MT53E256M32D2DS-053 AAT:B TR
制造商
Micron Technology
描述
IC DRAM 8GBIT 1.866GHZ 200WFBGA
类别
集成电路
家庭
记忆
系列
-
有存货
3249
在线数据表
-
询问

Product Specifications

Type 描述
系列:Automotive, AEC-Q100
包裹:Tape & Reel (TR)
零件状态:Active
内存类型:Volatile
内存格式:DRAM
技术:SDRAM - Mobile LPDDR4
内存大小:8Gb (256M x 32)
内存接口:-
时钟频率:1.866 GHz
写周期时间 - 字,页:-
访问时间:-
电压 - 电源:1.1V
工作温度:-40°C ~ 105°C (TC)
安装类型:Surface Mount
包/箱:200-WFBGA
供应商设备包:200-WFBGA (10x14.5)

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