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NCV5701BDR2G

NCV5701BDR2G

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制造商部分
NCV5701BDR2G
制造商
Sanyo Semiconductor/ON Semiconductor
描述
HIGH CURRENT IGBT GATE DR
类别
集成电路
家庭
pmic - 栅极驱动器
系列
-
有存货
10000
在线数据表
-
询问

Product Specifications

Type 描述
系列:-
包裹:Bulk
零件状态:Active
驱动配置:High-Side or Low-Side
渠道类型:Single
司机人数:1
门型:IGBT
电压 - 电源:20V
逻辑电压 - vil, vih:0.75V, 4.3V
电流 - 峰值输出(源、汇):20mA, 15mA
输入类型:Inverting
高压侧电压 - 最大值(自举):-
上升/下降时间(典型值):9.2ns, 7.9ns
工作温度:-40°C ~ 125°C (TA)
安装类型:Surface Mount
包/箱:8-SOIC (0.154", 3.90mm Width)
供应商设备包:8-SOIC

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