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NCV33152DR2G

NCV33152DR2G

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制造商部分
NCV33152DR2G
制造商
Sanyo Semiconductor/ON Semiconductor
描述
BUFFER/INVERTER BASED MOSFET DRI
类别
集成电路
家庭
pmic - 栅极驱动器
系列
-
有存货
16794
在线数据表
-
询问

Product Specifications

Type 描述
系列:-
包裹:Bulk
零件状态:Active
驱动配置:Low-Side
渠道类型:Independent
司机人数:2
门型:N-Channel MOSFET
电压 - 电源:6.1V ~ 18V
逻辑电压 - vil, vih:0.8V, 2.6V
电流 - 峰值输出(源、汇):1.5A, 1.5A
输入类型:Non-Inverting
高压侧电压 - 最大值(自举):-
上升/下降时间(典型值):36ns, 32ns
工作温度:-40°C ~ 150°C (TJ)
安装类型:Surface Mount
包/箱:8-SOIC (0.154", 3.90mm Width)
供应商设备包:8-SOIC

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