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NXH35C120L2C2SG

NXH35C120L2C2SG

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制造商部分
NXH35C120L2C2SG
制造商
Sanyo Semiconductor/ON Semiconductor
描述
IGBT MODULE, CIB 1200 V, 35 A IG
类别
分立半导体产品
家庭
晶体管 - igbts - 模块
系列
-
有存货
6815
在线数据表
-
询问

Product Specifications

Type 描述
系列:-
包裹:Tube
零件状态:Active
igbt型:-
配置:Three Phase Inverter with Brake
电压 - 集电极发射极击穿(最大值):1200 V
电流 - 集电极 (ic) (max):35 A
功率 - 最大值:20 mW
vce(on) (max) @ vge, ic:2.4V @ 15V, 35A
电流 - 集电极截止(最大值):250 µA
输入电容 (cies) @ vce:8.33 nF @ 20 V
输入:Three Phase Bridge Rectifier
ntc热敏电阻:Yes
工作温度:-40°C ~ 150°C (TJ)
安装类型:Through Hole
包/箱:26-PowerDIP Module (1.199", 47.20mm)
供应商设备包:26-DIP

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