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RN1901FETE85LF

RN1901FETE85LF

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制造商部分
RN1901FETE85LF
制造商
Toshiba Electronic Devices and Storage Corporation
描述
TRANS 2NPN PREBIAS 0.1W ES6
类别
分立半导体产品
家庭
晶体管 - 双极 (bjt) - 阵列,预偏置
系列
-
有存货
2780
在线数据表
-
询问

Product Specifications

Type 描述
系列:-
包裹:Tape & Reel (TR)Cut Tape (CT)
零件状态:Active
晶体管型:2 NPN - Pre-Biased (Dual)
电流 - 集电极 (ic) (max):100mA
电压 - 集电极发射极击穿(最大值):50V
电阻器 - 基极 (r1):4.7kOhms
电阻器 - 发射极基极 (r2):4.7kOhms
直流电流增益 (hfe) (min) @ ic, vce:30 @ 10mA, 5V
vce 饱和度(最大值)@ ib, ic:300mV @ 250µA, 5mA
电流 - 集电极截止(最大值):100nA (ICBO)
频率转换:250MHz
功率 - 最大值:100mW
安装类型:Surface Mount
包/箱:SOT-563, SOT-666
供应商设备包:ES6

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