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DTB123YUT106

DTB123YUT106

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制造商部分
DTB123YUT106
制造商
ROHM Semiconductor
描述
TRANS PREBIAS PNP 200MW UMT3
类别
分立半导体产品
家庭
晶体管 - 双极 (bjt) - 单,预偏置
系列
-
有存货
930
在线数据表
-
询问

Product Specifications

Type 描述
系列:-
包裹:Tape & Reel (TR)Cut Tape (CT)
零件状态:Active
晶体管型:PNP - Pre-Biased
电流 - 集电极 (ic) (max):500 mA
电压 - 集电极发射极击穿(最大值):50 V
电阻器 - 基极 (r1):2.2 kOhms
电阻器 - 发射极基极 (r2):10 kOhms
直流电流增益 (hfe) (min) @ ic, vce:56 @ 50mA, 5V
vce 饱和度(最大值)@ ib, ic:300mV @ 2.5mA, 50mA
电流 - 集电极截止(最大值):500nA
频率转换:200 MHz
功率 - 最大值:200 mW
安装类型:Surface Mount
包/箱:SC-70, SOT-323
供应商设备包:UMT3

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