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PDTA113EMB,315

PDTA113EMB,315

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制造商部分
PDTA113EMB,315
制造商
NXP Semiconductors
描述
NOW NEXPERIA PDTA113EMB - SMALL
类别
分立半导体产品
家庭
晶体管 - 双极 (bjt) - 单,预偏置
系列
-
有存货
140000
在线数据表
-
询问

Product Specifications

Type 描述
系列:-
包裹:Bulk
零件状态:Active
晶体管型:PNP - Pre-Biased
电流 - 集电极 (ic) (max):100 mA
电压 - 集电极发射极击穿(最大值):50 V
电阻器 - 基极 (r1):1 kOhms
电阻器 - 发射极基极 (r2):1 kOhms
直流电流增益 (hfe) (min) @ ic, vce:30 @ 40mA, 5V
vce 饱和度(最大值)@ ib, ic:150mV @ 1.5mA, 30mA
电流 - 集电极截止(最大值):100nA (ICBO)
频率转换:180 MHz
功率 - 最大值:250 mW
安装类型:Surface Mount
包/箱:3-XFDFN
供应商设备包:DFN1006B-3

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