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NSVMUN2112T1G

NSVMUN2112T1G

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制造商部分
NSVMUN2112T1G
制造商
Sanyo Semiconductor/ON Semiconductor
描述
SMALL SIGNAL BIPOLAR TRANSISTOR,
类别
分立半导体产品
家庭
晶体管 - 双极 (bjt) - 单,预偏置
系列
-
有存货
210000
在线数据表
-
询问

Product Specifications

Type 描述
系列:-
包裹:Bulk
零件状态:Active
晶体管型:PNP - Pre-Biased
电流 - 集电极 (ic) (max):100 mA
电压 - 集电极发射极击穿(最大值):50 V
电阻器 - 基极 (r1):22 kOhms
电阻器 - 发射极基极 (r2):22 kOhms
直流电流增益 (hfe) (min) @ ic, vce:60 @ 5mA, 10V
vce 饱和度(最大值)@ ib, ic:250mV @ 300µA, 10mA
电流 - 集电极截止(最大值):500nA
频率转换:-
功率 - 最大值:230 mW
安装类型:Surface Mount
包/箱:TO-236-3, SC-59, SOT-23-3
供应商设备包:SC-59-3

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