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UPA1759G-E1-AT

UPA1759G-E1-AT

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制造商部分
UPA1759G-E1-AT
制造商
Renesas Electronics America
描述
N-CHANNEL POWER MOSFET
类别
分立半导体产品
家庭
晶体管 - 场效应晶体管、场效应晶体管 - 阵列
系列
-
有存货
1986
在线数据表
-
询问

Product Specifications

Type 描述
系列:-
包裹:Bulk
零件状态:Obsolete
场效应管类型:2 N-Channel (Dual)
场效应管特征:Logic Level Gate
漏源电压 (vdss):60V
电流 - 连续漏极 (id) @ 25°c:5A
rds on (max) @ id, vgs:150mOhm @ 2.5A, 10V
vgs(th) (最大值) @ id:2.5V @ 1mA
栅极电荷 (qg) (max) @ vgs:8nC @ 10V
输入电容 (ciss) (max) @ vds:190pF @ 10V
功率 - 最大值:2W
工作温度:-
安装类型:Surface Mount
包/箱:8-SOIC (0.173", 4.40mm Width)
供应商设备包:8-PSOP

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