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CSD86330Q3D

CSD86330Q3D

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制造商部分
CSD86330Q3D
制造商
Texas Instruments
描述
MOSFET 2N-CH 25V 20A 8LSON
类别
分立半导体产品
家庭
晶体管 - 场效应晶体管、场效应晶体管 - 阵列
系列
-
有存货
5000
在线数据表
-
询问

Product Specifications

Type 描述
系列:NexFET™
包裹:Tape & Reel (TR)Cut Tape (CT)
零件状态:Active
场效应管类型:2 N-Channel (Half Bridge)
场效应管特征:Logic Level Gate
漏源电压 (vdss):25V
电流 - 连续漏极 (id) @ 25°c:20A
rds on (max) @ id, vgs:9.6mOhm @ 14A, 8V
vgs(th) (最大值) @ id:2.1V @ 250µA
栅极电荷 (qg) (max) @ vgs:6.2nC @ 4.5V
输入电容 (ciss) (max) @ vds:920pF @ 12.5V
功率 - 最大值:6W
工作温度:-55°C ~ 150°C (TJ)
安装类型:Surface Mount
包/箱:8-PowerLDFN
供应商设备包:8-LSON (3.3x3.3)

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