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HAT2218R-EL-E

HAT2218R-EL-E

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制造商部分
HAT2218R-EL-E
制造商
Renesas Electronics America
描述
POWER, 7.5A, 30V, N-CH MOSFET
类别
分立半导体产品
家庭
晶体管 - 场效应晶体管、场效应晶体管 - 阵列
系列
-
有存货
3981
在线数据表
-
询问

Product Specifications

Type 描述
系列:-
包裹:Bulk
零件状态:Obsolete
场效应管类型:2 N-Channel (Dual) Asymmetrical
场效应管特征:Logic Level Gate, 4.5V Drive
漏源电压 (vdss):30V
电流 - 连续漏极 (id) @ 25°c:7.5A, 8A
rds on (max) @ id, vgs:24mOhm @ 3.75A, 10V
vgs(th) (最大值) @ id:-
栅极电荷 (qg) (max) @ vgs:4.6nC @ 4.5V
输入电容 (ciss) (max) @ vds:630pF @ 10V
功率 - 最大值:1.5W
工作温度:150°C (TJ)
安装类型:Surface Mount
包/箱:8-SOIC (0.154", 3.90mm Width)
供应商设备包:8-SOP

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