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ALD212900SAL

ALD212900SAL

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制造商部分
ALD212900SAL
制造商
Advanced Linear Devices, Inc.
描述
MOSFET 2N-CH 10.6V 0.08A 8SOIC
类别
分立半导体产品
家庭
晶体管 - 场效应晶体管、场效应晶体管 - 阵列
系列
-
有存货
1026
在线数据表
-
询问

Product Specifications

Type 描述
系列:EPAD®, Zero Threshold™
包裹:Tube
零件状态:Active
场效应管类型:2 N-Channel (Dual) Matched Pair
场效应管特征:Logic Level Gate
漏源电压 (vdss):10.6V
电流 - 连续漏极 (id) @ 25°c:80mA
rds on (max) @ id, vgs:14Ohm
vgs(th) (最大值) @ id:20mV @ 20µA
栅极电荷 (qg) (max) @ vgs:-
输入电容 (ciss) (max) @ vds:30pF @ 5V
功率 - 最大值:500mW
工作温度:0°C ~ 70°C (TJ)
安装类型:Surface Mount
包/箱:8-SOIC (0.154", 3.90mm Width)
供应商设备包:8-SOIC

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