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MSCSM120HM50CT3AG

MSCSM120HM50CT3AG

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制造商部分
MSCSM120HM50CT3AG
制造商
Roving Networks / Microchip Technology
描述
PM-MOSFET-SIC-SBD~-SP3F
类别
分立半导体产品
家庭
晶体管 - 场效应晶体管、场效应晶体管 - 阵列
系列
-
有存货
18
在线数据表
-
询问

Product Specifications

Type 描述
系列:-
包裹:Tube
零件状态:Active
场效应管类型:4 N-Channel
场效应管特征:Silicon Carbide (SiC)
漏源电压 (vdss):1200V (1.2kV)
电流 - 连续漏极 (id) @ 25°c:55A (Tc)
rds on (max) @ id, vgs:50mOhm @ 40A, 20V
vgs(th) (最大值) @ id:2.7V @ 1mA
栅极电荷 (qg) (max) @ vgs:137nC @ 20V
输入电容 (ciss) (max) @ vds:1990pF @ 1000V
功率 - 最大值:245W (Tc)
工作温度:-40°C ~ 175°C (TJ)
安装类型:Chassis Mount
包/箱:Module
供应商设备包:SP3F

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